型号 封装 在线定购
M45PE80-VMW6G(查看) SO8 Wide
M45PE80-VMW6TG(查看) SO8 Wide


技术资料—— M45PE80 PDF技术资料
M45PE80 参数
M45PE80 基本参数
类型 串行内存
容量 (Mb) 8
工作电压 (V) 2.7-3.6
M45PE80 其他特性
宽度 x1
接口 SPI
速度 (MHz) 75
页大小 (bytes) 256
温度范围 -40°C to 85°C
M45PE80 封装与引脚
SO8 Narrow, SO8 Wide, VFQFPN8

M45PE80 概述

The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

M45PE80 is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4,096 pages, or 1,048,576 bytes. The memory can be erased a page at a time, using the Page Erase instruction, or a sector at a time, using the Sector Erase instruction.

M45PE80 特性

  • SPI bus compatible serial interface.
  • 75 MHz clock rate (maximum).
  • 2.7 V to 3.6 V single supply voltage.
  • 8 Mbit of page-erasable Flash memory.
  • Page size: 256 bytes
    - Page Write in 11 ms (typical).
    - Page Program in 0.8 ms (typical).
    - Page Erase in 10 ms (typical).
  • Sector Erase (64 Kbits).
  • Hardware write protection of the bottom sector (64 Kbytes).
  • Electronic signature
    - JEDEC standard two-byte signature (4014h).
    - Unique ID code (UID) with 16 bytes read only, available upon customer request only on T9HX process technology parts.
  • Deep power-down mode 1 μA (typical).
  • More than 100,000 write cycles.
  • More than 20 years data retention.
  • Packages
    - ECOPACK® (RoHS compliant).