型号 封装 在线定购
M45PE20-VMN6TP(查看) SO8 Narrow


技术资料—— M45PE20 PDF技术资料
M45PE20 参数
M45PE20 基本参数
类型 串行内存
容量 (Mb) 2
工作电压 (V) 2.7-3.6
M45PE20 其他特性
宽度 x1
接口 SPI
速度 (MHz) 75
页大小 (bytes) 256
温度范围 -40°C to 85°C
M45PE20 封装与引脚

M45PE20 概述

The M45PE20 is a 2-Mbit (256 Kbits ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle.

M45PE20 is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or 262,144 bytes. The memory can be erased a page at a time, using the page erase instruction, or a sector at a time, using the sector erase instruction.

M45PE20 特性

  • SPI bus compatible serial interface.
  • 75 MHz clock rate (maximum).
  • 2.7 V to 3.6 V single supply voltage.
  • 2 Mbit of page-erasable Flash memory.
  • Page size: 256 bytes
    - Page Write in 11 ms (typical).
    - Page Program in 0.8 ms (typical).
    - Page Erase in 10 ms (typical).
  • Sector Erase (512 Kbits).
  • Hardware write protection of the bottom sector (64 Kbytes).
  • Electronic signature
    - JEDEC standard two-byte signature (4012h).
    - Unique ID code (UID) with 16 bytes readonly, available upon customer request only in the T9HX process.
  • Deep power-down mode 1 μA (typical).
  • More than 100,000 write cycles.
  • More than 20 years data retention.
  • Packages
    - ECOPACK® (RoHS compliant).