型号 封装 在线定购
M25P64-VMF6TP(查看) SO16


技术资料—— M25P64 PDF技术资料
M25P64 参数
M25P64 基本参数
类型 串行内存
容量 (Mb) 64
工作电压 (V) 2.7-3.6
M25P64 其他特性
宽度 x1
接口 SPI
速度 (MHz) 75
页大小 (bytes) 256
温度范围 -40°C to 85°C
M25P64 封装与引脚

M25P64 概述

The M25P64 is a 64 Mbit (8M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus instructions allowing clock frequency up to 75 MHz. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

An enhanced Fast Program/Erase mode is available to speed up operations in factory environment. The device enters this mode whenever the VPPH voltage is applied to the Write Protect / Enhanced Program Supply Voltage pin (W/VPP).

The memory is organized as 128 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 32768 pages, or 8388608 bytes.

M25P64 特性

  • 64 Mbit of Flash memory.
  • 2.7 V to 3.6 V single supply voltage.
  • SPI bus compatible serial interface.
  • 75 MHz clock rate (maximum).
  • Page Program (up to 256 Bytes)
    - in 1.4 ms (typical).
    - in 0.35 ms (typical with VPP = 9 V).
  • Sector Erase (512 Kbit).
  • Bulk Erase (64 Mbit).
  • Electronic signatures
    - JEDEC standard two-Byte signature(2017h).
    - RES instruction, one-Byte, signature (16h), for backward compatibility.
    - Unique ID code (UID) with 16 bytes, readonly: available upon customer request.
  • Hardware Write Protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2).
  • More than 100 000 Erase/Program cycles per sector.
  • More than 20-year data retention.
  • Packages
    - RoHS compliant.
  • Automotive Certified Parts Available.