型号 封装 在线定购
M25PE80-VMW6G(查看) SO8W
M25PE80-VMW6TG (查看) SO8W


技术资料—— M25PE80 PDF技术资料
M25PE80 参数
M25PE80 基本参数
类型 串行内存
容量 (Mb) 8
工作电压 (V) 2.7-3.6
M25PE80 其他特性
宽度 x1
接口 SPI
速度 (MHz) 75
页大小 (bytes) 256
温度范围 -40°C to 85°C
M25PE80 封装与引脚

M25PE80 概述

The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle.

The memory is organized as 16 sectors that are further divided up into 16 subsectors each(256 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes.

M25PE80 特性

  • 8 Mbit of page-erasable Flash memory.
  • SPI bus compatible serial interface.
  • Page size: 256 bytes
    - Page write in 11 ms (typical).
    - Page program in 0.8 ms (typical).
    - Page erase in 10 ms (typical).
  • SubSector Erase (4 Kbits).
  • Sector Erase (64 Kbits).
  • Bulk Erase (8 Mbits).
  • 2.7 V to 3.6 V single supply voltage
  • 75 MHz clock rate (maximum)
  • Deep power-down mode 1 μA (typical).
  • Electronic signature
    - JEDEC standard two-byte signature (8014h).
    - Unique ID code (UID) with 16 bytes readonly, available upon customer request only in the T9HX process.
  • Software write protection on a 64-Kbyte sector basis.
  • More than 100 000 Write cycles.
  • More than 20 years data retention.
  • Hardware write protection of the memory area selected using the BP0, BP1 and BP2 bits.
  • Packages
    - ECOPACK® (RoHS compliant).