型号 封装 在线定购
M25PE20-VMN6TP(查看) SO8N


技术资料—— M25PE20 PDF技术资料
M25PE20 参数
M25PE20 基本参数
类型 串行内存
容量 (Mb) 2
工作电压 (V) 2.7-3.6
M25PE20 其他特性
宽度 x1
接口 SPI
速度 (MHz) 75
页大小 (bytes) 256
温度范围 -40°C to 85°C
M25PE20 封装与引脚

M25PE20 概述

The M25PE20 is 2 Mbit (256 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or 262,144 bytes

The M25PE20 memory can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction or as a whole, using the Bulk Erase instruction.

M25PE20 特性

  • 2 Mbit of page-erasable Flash memory.
  • 2.7 V to 3.6 V single supply voltage.
  • SPI bus compatible serial interface.
  • 75 MHz clock rate (maximum).
  • Page size: 256 bytes
    - Page Write in 11 ms (typical).
    - Page Program in 0.8 ms (typical).
    - Page Erase in 10 ms (typical).
  • SubSector Erase (32 Kbits).
  • Sector Erase (512 Kbits).
  • Bulk Erase (2 Mbits).
  • Deep Power-down mode 1 μA (typical).
  • Electronic signature
    - JEDEC standard two-byte signature (8012h).
    - Unique ID code (UID) with 16 bytes readonly, available upon customer request only in the T9HX process.
  • Software write protection on a 64-Kbyte sector basis.
  • More than 100 000 Write cycles.
  • More than 20 years data retention.
  • Hardware write protection of the memory area selected using the BP0 and BP1 bits.
  • Packages
    - ECOPACK® (RoHS compliant).