型号 封装 在线定购
M25P40-VMN6TPB(查看) SO8N


技术资料—— M25P40 PDF技术资料
M25P40 参数
M25P40 基本参数
类型 串行内存
容量 (Mb) 4
工作电压 (V) 2.3-3.6
M25P40 其他特性
宽度 x1
接口 SPI
速度 (MHz) 75
页大小 (bytes) 256
温度范围 -40°C to 85°C
M25P40 封装与引脚

M25P40 概述

The M25P40 is a 4 Mbit (512 K × 8) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The M25P40 features high performance instructions allowing clock frequency up to 75 MHz. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction

The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 2048 pages, or 524,288 bytes. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.

M25P40 特性

  • 4 Mbit of Flash memory.
  • 2.3 V to 3.6 V single supply voltage.
  • SPI bus compatible serial interface.
  • 75 MHz clock rate (maximum).
  • Page Program (up to 256 bytes) in 0.8 ms (typical).
  • Sector Erase (512 Kbit) in 0.6 s (typical).
  • Bulk Erase (4 Mbit) in 4.5 s (typical).
  • Deep Power-down mode 1 μA (typical).
  • Hardware Write Protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2).
  • Electronic signatures
    - JEDEC standard two-byte signature(2013h).
    - Unique ID code (UID) with 16 bytes readonly, available upon customer request.
    - RES instruction, one-byte, signature (12h), for backward compatibility.
  • Packages
    - RoHS compliant.
  • Automotive grade parts available.