logo

REF191

订购信息

型号 封装 在线定购
REF191ESZ(查看) SOIC8
REF191GSZ(查看) SOIC8

引脚布局

(点击图片看大图)
技术资料—— REF191 PDF技术资料

REF191 概述

The REF191 precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy.

The REF191 references is specified over the extended industrial temperature range (−40°C to +85°C) with typical performance specifications over −40°C to +125°C for applications, such as automotive.

REF191 参数
REF191 基本参数
Vout   2.048 V
工作电压   +2.3 to +15 V
REF191 其他特性
初始精度   0.1%
基准输出电流   30 mA
REF191 封装与引脚
SOIC8

REF191 特性

  • Initial Accuracy: ±2 mV Max
  • Temperature Coefficient: 5 ppm/°C Max
  • Low Supply Current: 45 µA Max
  • Sleep Mode: 15 µA Max
  • Low Dropout Voltage
  • Load Regulation: 4 ppm/mA
  • Line Regulation: 4 ppm/V
  • High Output Current: 30 mA
  • Short-Circuit Protection

REF191 应用

  • Portable instruments
  • ADCs and DACs
  • Smart sensors
  • Solar powered applications
  • Loop-current-powered instruments